Fabrication Techniques for a Tuneable Room Temperature Hybrid Single-electron Transistor and Field-effect Transistor

Fabrication Techniques for a Tuneable Room Temperature Hybrid Single-electron Transistor and Field-effect Transistor

Hybrid room-temperature (RT) silicon single-electron – field effect transistors (SET-FETs) provide a means to switch between ‘classical’, high current FET, and low-power SET operation, using a gate voltage. While operating as a SET, charge on a silicon quantum dot (QD) within the current channel, ca...

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Bibliographic Details
Main Authors: Kai-Lin Chu, Wenkun He, Faris Abualnaja, Mervyn Jones, Zahid Durrani
Format: Article
Language:English
Published: Elsevier 2024-09-01
Series:Micro and Nano Engineering
Subjects:
Room-temperature single-electron transistor
finFET
Nanofabrication
Silicon quantum dots
electron beam lithography
Coulomb blockade
Online Access:http://www.sciencedirect.com/science/article/pii/S2590007224000388

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http://www.sciencedirect.com/science/article/pii/S2590007224000388

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