Interfacial modulation of magnetic relaxation and electrical characteristic in RuO2/CrO2 antiferromagnet-half metal bilayer

Interfacial modulation of magnetic relaxation and electrical characteristic in RuO2/CrO2 antiferromagnet-half metal bilayer

Half-metallic chromium dioxide (CrO2) is a promising candidate in magnetic random-access memory (MRAM) devices due to its nearly full spin polarization and ultralow Gilbert damping at room temperature. In this study, we succeeded in fabricating (110) and (100)-oriented RuO2/CrO2 bilayers with differ...

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Bibliographic Details
Main Authors: Zhenhua Zhang, Yong Liu, Zhihong Lu, Rui Xiong
Format: Article
Language:English
Published: Elsevier 2024-02-01
Series:Materials & Design
Subjects:
RuO2/CrO2 bilayer
Magnetic damping
Interfacial strain
MRAM
Negative magnetoresistance
Online Access:http://www.sciencedirect.com/science/article/pii/S0264127524000236

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http://www.sciencedirect.com/science/article/pii/S0264127524000236

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