A Novel Ultra-Low Power 8T SRAM-Based Compute-in-Memory Design for Binary Neural Networks
We propose a novel ultra-low-power, voltage-based compute-in-memory (CIM) design with a new single-ended 8T SRAM bit cell structure. Since the proposed SRAM bit cell uses a single bitline for CIM calculation with decoupled read and write operations, it supports a much higher energy efficiency. In ad...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-09-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/10/17/2181 |