RESIDUAL STRESS ANALYSIS OF UNCOOLED INFRARED FOCAL PLANE ARRAYS BY MICRO-RAMAN SPECTROSCOPY
The uncooled infrared focal plane arrays（ UIRFPA） used in this micro-Raman experiment are composed of Si O2 thin film and Si substrate. They have the characteristic of MEMS microstructure. The process of the thermal oxidation may lead to the residual stress on account of thermal ecpansion coefficien...
| Main Authors: | , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Journal of Mechanical Strength
2015-01-01
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| Series: | Jixie qiangdu |
| Subjects: | |
| Online Access: | http://www.jxqd.net.cn/thesisDetails#10.16579/j.issn.1001.9669.2015.01.008 |
| _version_ | 1797767973431148544 |
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| author | CEN Hao WANG KeYong |
| author_facet | CEN Hao WANG KeYong |
| author_sort | CEN Hao |
| collection | DOAJ |
| description | The uncooled infrared focal plane arrays（ UIRFPA） used in this micro-Raman experiment are composed of Si O2 thin film and Si substrate. They have the characteristic of MEMS microstructure. The process of the thermal oxidation may lead to the residual stress on account of thermal ecpansion coefficient mismatch and lattice mismatch. Residual stress in thin film has an important effect on the properties of the micro-elements. Therefore,it is necessary to measure the film residual stress. The residual stress in two Si O2 thin film / Si substrate has been investigated by using micro-Raman spectroscopy（ MRS）. The results show that the residual stress along the cross – section of the Si substrate is a quadric decrease along with an increase in the depth. By means of the force equilibrium and infinitesimal calculus,the residual stress in thin flim can reach 3. 3GPa and2. 2GPa respectively for two samples. Then it can be concluded that residual stress in thin flim is compressive considered the analysis of flim micro-element. In the releasing process of the residual stress,it may make film fold,bend,bulge,and even cause disorder for the film sample when the residual stress reaches GPa level. |
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| format | Article |
| id | doaj.art-100a1510d145490fbd2f05e5d0adb8b1 |
| institution | Directory Open Access Journal |
| issn | 1001-9669 |
| language | zho |
| last_indexed | 2024-03-12T20:47:45Z |
| publishDate | 2015-01-01 |
| publisher | Editorial Office of Journal of Mechanical Strength |
| record_format | Article |
| series | Jixie qiangdu |
| spelling | doaj.art-100a1510d145490fbd2f05e5d0adb8b12023-08-01T07:39:37ZzhoEditorial Office of Journal of Mechanical StrengthJixie qiangdu1001-96692015-01-0137687330591036RESIDUAL STRESS ANALYSIS OF UNCOOLED INFRARED FOCAL PLANE ARRAYS BY MICRO-RAMAN SPECTROSCOPYCEN HaoWANG KeYongThe uncooled infrared focal plane arrays（ UIRFPA） used in this micro-Raman experiment are composed of Si O2 thin film and Si substrate. They have the characteristic of MEMS microstructure. The process of the thermal oxidation may lead to the residual stress on account of thermal ecpansion coefficient mismatch and lattice mismatch. Residual stress in thin film has an important effect on the properties of the micro-elements. Therefore,it is necessary to measure the film residual stress. The residual stress in two Si O2 thin film / Si substrate has been investigated by using micro-Raman spectroscopy（ MRS）. The results show that the residual stress along the cross – section of the Si substrate is a quadric decrease along with an increase in the depth. By means of the force equilibrium and infinitesimal calculus,the residual stress in thin flim can reach 3. 3GPa and2. 2GPa respectively for two samples. Then it can be concluded that residual stress in thin flim is compressive considered the analysis of flim micro-element. In the releasing process of the residual stress,it may make film fold,bend,bulge,and even cause disorder for the film sample when the residual stress reaches GPa level.http://www.jxqd.net.cn/thesisDetails#10.16579/j.issn.1001.9669.2015.01.008Micro-Raman spectroscopy;Uncooled;Focal plane arrays;Residual stress;Thin film |
| spellingShingle | CEN Hao WANG KeYong RESIDUAL STRESS ANALYSIS OF UNCOOLED INFRARED FOCAL PLANE ARRAYS BY MICRO-RAMAN SPECTROSCOPY Jixie qiangdu Micro-Raman spectroscopy;Uncooled;Focal plane arrays;Residual stress;Thin film |
| title | RESIDUAL STRESS ANALYSIS OF UNCOOLED INFRARED FOCAL PLANE ARRAYS BY MICRO-RAMAN SPECTROSCOPY |
| title_full | RESIDUAL STRESS ANALYSIS OF UNCOOLED INFRARED FOCAL PLANE ARRAYS BY MICRO-RAMAN SPECTROSCOPY |
| title_fullStr | RESIDUAL STRESS ANALYSIS OF UNCOOLED INFRARED FOCAL PLANE ARRAYS BY MICRO-RAMAN SPECTROSCOPY |
| title_full_unstemmed | RESIDUAL STRESS ANALYSIS OF UNCOOLED INFRARED FOCAL PLANE ARRAYS BY MICRO-RAMAN SPECTROSCOPY |
| title_short | RESIDUAL STRESS ANALYSIS OF UNCOOLED INFRARED FOCAL PLANE ARRAYS BY MICRO-RAMAN SPECTROSCOPY |
| title_sort | residual stress analysis of uncooled infrared focal plane arrays by micro raman spectroscopy |
| topic | Micro-Raman spectroscopy;Uncooled;Focal plane arrays;Residual stress;Thin film |
| url | http://www.jxqd.net.cn/thesisDetails#10.16579/j.issn.1001.9669.2015.01.008 |
| work_keys_str_mv | AT cenhao residualstressanalysisofuncooledinfraredfocalplanearraysbymicroramanspectroscopy AT wangkeyong residualstressanalysisofuncooledinfraredfocalplanearraysbymicroramanspectroscopy |