Impacts of SiC-MOSFET Gate Oxide Degradation on Three-Phase Voltage and Current Source Inverters
In this paper, the performance variations of SiC MOSFET-based voltage and current source inverters under gate oxide degradation are studied. It is confirmed that the turn-on and turn-off delays of SiC MOSFETs change significantly by high electric field stress, which accelerates the gate oxide degrad...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-12-01
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| Series: | Machines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2075-1702/10/12/1194 |