Electrical characteristics of WSe2 transistor with amorphous BN capping layer

Electrical characteristics of WSe2 transistor with amorphous BN capping layer

Back-gated WSe2 field effect transistor (FET) with amorphous BN (a-BN) capping layer was fabricated by a direct chemical vapor deposition (CVD) assemble technique, and the electrical performance was investigated. The field effect mobility and the on/off current ratio of the a-BN capped WSe2 FET both...

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Bibliographic Details
Main Authors: Zhanjie Lu, Meijie Zhu, Gehui Zhang, Wenyu Liu, Shuo Han, Le Wang
Format: Article
Language:English
Published: Elsevier 2022-07-01
Series:Results in Physics
Subjects:
Capping layer
Boron nitride
Amorphous
Chemical vapor deposition
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379722002923

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http://www.sciencedirect.com/science/article/pii/S2211379722002923

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