Enhancement-Mode Characteristics of Al₀.₆₅Ga₀.₃₅N/Al₀.₃Ga₀.₇N/AlN/SiC MOS-HFETs

Enhancement-Mode Characteristics of Al₀.₆₅Ga₀.₃₅N/Al₀.₃Ga₀.₇N/AlN/SiC MOS-HFETs

Widegap-channel Al<sub>0.65</sub>Ga<sub>0.35</sub>N/Al<sub>0.3</sub>Ga<sub>0.7</sub>N/AlN/SiC metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with ultrasonic spray pyrolysis deposition (USPD) grown Al<sub>2</sub&...

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Bibliographic Details
Main Authors: Ching-Sung Lee, Chia-Lun Li, Wei-Chou Hsu, Cheng-Yang You, Han-Yin Liu
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Widegap AlGaN channel
MOS-HFET
enhancement-mode
Al₂O₃
non-vacuum ultrasonic spray pyrolysis deposition
Online Access:https://ieeexplore.ieee.org/document/9581294/

Internet

https://ieeexplore.ieee.org/document/9581294/

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