Enhancement-Mode Characteristics of Al₀.₆₅Ga₀.₃₅N/Al₀.₃Ga₀.₇N/AlN/SiC MOS-HFETs
Widegap-channel Al<sub>0.65</sub>Ga<sub>0.35</sub>N/Al<sub>0.3</sub>Ga<sub>0.7</sub>N/AlN/SiC metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with ultrasonic spray pyrolysis deposition (USPD) grown Al<sub>2</sub&...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9581294/ |
| _version_ | 1818404262555680768 |
|---|---|
| author | Ching-Sung Lee Chia-Lun Li Wei-Chou Hsu Cheng-Yang You Han-Yin Liu |
| author_facet | Ching-Sung Lee Chia-Lun Li Wei-Chou Hsu Cheng-Yang You Han-Yin Liu |
| author_sort | Ching-Sung Lee |
| collection | DOAJ |
| description | Widegap-channel Al<sub>0.65</sub>Ga<sub>0.35</sub>N/Al<sub>0.3</sub>Ga<sub>0.7</sub>N/AlN/SiC metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with ultrasonic spray pyrolysis deposition (USPD) grown Al<sub>2</sub>O<sub>3</sub> gate-oxide demonstrating enhancement-mode (E-mode) operation are investigated for the first time. The E-mode operation was achieved by using fluorine ions (F<sup>−</sup>) implantation. In comparison, conventional Schottky-gate device (sample A) and MOS-HFET (sample B) showing depletion-mode (D-mode) operation were fabricated on the same epitaxial structure. The device characteristics with respect to different gate-to-drain spacings (<inline-formula> <tex-math notation="LaTeX">$L_{GD}$ </tex-math></inline-formula>) of <inline-formula> <tex-math notation="LaTeX">$6~\boldsymbol {\mu }\text{m}$ </tex-math></inline-formula> and 14 <inline-formula> <tex-math notation="LaTeX">$\boldsymbol {\mu }\text{m}$ </tex-math></inline-formula> have also been studied. The present E-mode Al<sub>0.65</sub>Ga<sub>0.35</sub>N/Al<sub>0.3</sub>Ga<sub>0.7</sub>N/AlN MOS-HFET (sample C) with <inline-formula> <tex-math notation="LaTeX">$L_{GD} =6$ </tex-math></inline-formula> (14) <inline-formula> <tex-math notation="LaTeX">$\boldsymbol {\mu }\text{m}$ </tex-math></inline-formula> has demonstrated improved maximum drain-source current density (<inline-formula> <tex-math notation="LaTeX">$I_{DS,max}$ </tex-math></inline-formula>) of 206.3 (163.5) mA/mm at <inline-formula> <tex-math notation="LaTeX">$V_{DS} =20$ </tex-math></inline-formula> V, maximum extrinsic transconductance (<inline-formula> <tex-math notation="LaTeX">$\text{g}_{m,max}$ </tex-math></inline-formula>) of 32.9 (22.0) mS/mm, on/off-current ratio (<inline-formula> <tex-math notation="LaTeX">$I_{on}/I_{off}$ </tex-math></inline-formula>) of 3.7 <inline-formula> <tex-math notation="LaTeX">${\times }\,\,10^{9}$ </tex-math></inline-formula> (<inline-formula> <tex-math notation="LaTeX">$1.8\,\,{\times }\,\,10^{9}$ </tex-math></inline-formula>), two-terminal off-state gate-drain breakdown voltage (<inline-formula> <tex-math notation="LaTeX">$BV_{GD}$ </tex-math></inline-formula>) of −370 (−475) V, and three-terminal on-state drain-source breakdown voltage (<inline-formula> <tex-math notation="LaTeX">$BV_{DS}$ </tex-math></inline-formula>) of 330 395 V. |
| first_indexed | 2024-12-14T08:37:22Z |
| format | Article |
| id | doaj.art-103530f8aa1f40ad9108068d3e36fed6 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-14T08:37:22Z |
| publishDate | 2021-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-103530f8aa1f40ad9108068d3e36fed62022-12-21T23:09:23ZengIEEEIEEE Journal of the Electron Devices Society2168-67342021-01-0191003100810.1109/JEDS.2021.31214419581294Enhancement-Mode Characteristics of Al₀.₆₅Ga₀.₃₅N/Al₀.₃Ga₀.₇N/AlN/SiC MOS-HFETsChing-Sung Lee0https://orcid.org/0000-0002-3044-5073Chia-Lun Li1Wei-Chou Hsu2Cheng-Yang You3Han-Yin Liu4https://orcid.org/0000-0003-1150-7192Department of Electronic Engineering, Feng Chia University, Taichung, TaiwanDepartment of Electronic Engineering, Feng Chia University, Taichung, TaiwanInstitute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, TaiwanInstitute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, TaiwanDepartment of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, TaiwanWidegap-channel Al<sub>0.65</sub>Ga<sub>0.35</sub>N/Al<sub>0.3</sub>Ga<sub>0.7</sub>N/AlN/SiC metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with ultrasonic spray pyrolysis deposition (USPD) grown Al<sub>2</sub>O<sub>3</sub> gate-oxide demonstrating enhancement-mode (E-mode) operation are investigated for the first time. The E-mode operation was achieved by using fluorine ions (F<sup>−</sup>) implantation. In comparison, conventional Schottky-gate device (sample A) and MOS-HFET (sample B) showing depletion-mode (D-mode) operation were fabricated on the same epitaxial structure. The device characteristics with respect to different gate-to-drain spacings (<inline-formula> <tex-math notation="LaTeX">$L_{GD}$ </tex-math></inline-formula>) of <inline-formula> <tex-math notation="LaTeX">$6~\boldsymbol {\mu }\text{m}$ </tex-math></inline-formula> and 14 <inline-formula> <tex-math notation="LaTeX">$\boldsymbol {\mu }\text{m}$ </tex-math></inline-formula> have also been studied. The present E-mode Al<sub>0.65</sub>Ga<sub>0.35</sub>N/Al<sub>0.3</sub>Ga<sub>0.7</sub>N/AlN MOS-HFET (sample C) with <inline-formula> <tex-math notation="LaTeX">$L_{GD} =6$ </tex-math></inline-formula> (14) <inline-formula> <tex-math notation="LaTeX">$\boldsymbol {\mu }\text{m}$ </tex-math></inline-formula> has demonstrated improved maximum drain-source current density (<inline-formula> <tex-math notation="LaTeX">$I_{DS,max}$ </tex-math></inline-formula>) of 206.3 (163.5) mA/mm at <inline-formula> <tex-math notation="LaTeX">$V_{DS} =20$ </tex-math></inline-formula> V, maximum extrinsic transconductance (<inline-formula> <tex-math notation="LaTeX">$\text{g}_{m,max}$ </tex-math></inline-formula>) of 32.9 (22.0) mS/mm, on/off-current ratio (<inline-formula> <tex-math notation="LaTeX">$I_{on}/I_{off}$ </tex-math></inline-formula>) of 3.7 <inline-formula> <tex-math notation="LaTeX">${\times }\,\,10^{9}$ </tex-math></inline-formula> (<inline-formula> <tex-math notation="LaTeX">$1.8\,\,{\times }\,\,10^{9}$ </tex-math></inline-formula>), two-terminal off-state gate-drain breakdown voltage (<inline-formula> <tex-math notation="LaTeX">$BV_{GD}$ </tex-math></inline-formula>) of −370 (−475) V, and three-terminal on-state drain-source breakdown voltage (<inline-formula> <tex-math notation="LaTeX">$BV_{DS}$ </tex-math></inline-formula>) of 330 395 V.https://ieeexplore.ieee.org/document/9581294/Widegap AlGaN channelMOS-HFETenhancement-modeAl₂O₃non-vacuum ultrasonic spray pyrolysis deposition |
| spellingShingle | Ching-Sung Lee Chia-Lun Li Wei-Chou Hsu Cheng-Yang You Han-Yin Liu Enhancement-Mode Characteristics of Al₀.₆₅Ga₀.₃₅N/Al₀.₃Ga₀.₇N/AlN/SiC MOS-HFETs IEEE Journal of the Electron Devices Society Widegap AlGaN channel MOS-HFET enhancement-mode Al₂O₃ non-vacuum ultrasonic spray pyrolysis deposition |
| title | Enhancement-Mode Characteristics of Al₀.₆₅Ga₀.₃₅N/Al₀.₃Ga₀.₇N/AlN/SiC MOS-HFETs |
| title_full | Enhancement-Mode Characteristics of Al₀.₆₅Ga₀.₃₅N/Al₀.₃Ga₀.₇N/AlN/SiC MOS-HFETs |
| title_fullStr | Enhancement-Mode Characteristics of Al₀.₆₅Ga₀.₃₅N/Al₀.₃Ga₀.₇N/AlN/SiC MOS-HFETs |
| title_full_unstemmed | Enhancement-Mode Characteristics of Al₀.₆₅Ga₀.₃₅N/Al₀.₃Ga₀.₇N/AlN/SiC MOS-HFETs |
| title_short | Enhancement-Mode Characteristics of Al₀.₆₅Ga₀.₃₅N/Al₀.₃Ga₀.₇N/AlN/SiC MOS-HFETs |
| title_sort | enhancement mode characteristics of al x2080 x2086 x2085 ga x2080 x2083 x2085 n al x2080 x2083 ga x2080 x2087 n aln sic mos hfets |
| topic | Widegap AlGaN channel MOS-HFET enhancement-mode Al₂O₃ non-vacuum ultrasonic spray pyrolysis deposition |
| url | https://ieeexplore.ieee.org/document/9581294/ |
| work_keys_str_mv | AT chingsunglee enhancementmodecharacteristicsofalx2080x2086x2085gax2080x2083x2085nalx2080x2083gax2080x2087nalnsicmoshfets AT chialunli enhancementmodecharacteristicsofalx2080x2086x2085gax2080x2083x2085nalx2080x2083gax2080x2087nalnsicmoshfets AT weichouhsu enhancementmodecharacteristicsofalx2080x2086x2085gax2080x2083x2085nalx2080x2083gax2080x2087nalnsicmoshfets AT chengyangyou enhancementmodecharacteristicsofalx2080x2086x2085gax2080x2083x2085nalx2080x2083gax2080x2087nalnsicmoshfets AT hanyinliu enhancementmodecharacteristicsofalx2080x2086x2085gax2080x2083x2085nalx2080x2083gax2080x2087nalnsicmoshfets |