A Time-of-Flight Range Sensor Using Four-Tap Lock-In Pixels with High near Infrared Sensitivity for LiDAR Applications
In this paper, a back-illuminated (BSI) time-of-flight (TOF) sensor using 0.2 µm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology is developed for long-range laser imaging detection and ranging (LiDAR) application. A 200 µm-thick bulk silicon in...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-12-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/20/1/116 |
| _version_ | 1811303786923163648 |
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| author | Sanggwon Lee Keita Yasutomi Masato Morita Hodaka Kawanishi Shoji Kawahito |
| author_facet | Sanggwon Lee Keita Yasutomi Masato Morita Hodaka Kawanishi Shoji Kawahito |
| author_sort | Sanggwon Lee |
| collection | DOAJ |
| description | In this paper, a back-illuminated (BSI) time-of-flight (TOF) sensor using 0.2 µm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology is developed for long-range laser imaging detection and ranging (LiDAR) application. A 200 µm-thick bulk silicon in the SOI substrate is fully depleted by applying high negative voltage at the backside for higher quantum efficiency (QE) in a near-infrared (NIR) region. The proposed SOI-based four-tap charge modulator achieves a high-speed charge modulation and high modulation contrast of 71% in a NIR region. In addition, in-pixel drain function is used for short-pulse TOF measurements. A distance measurement up to 27 m is carried out with +1.8~−3.0% linearity error and range resolution of 4.5 cm in outdoor conditions. The measured QE of 55% is attained at 940 nm which is suitable for outdoor use due to the reduced spectral components of solar radiation. |
| first_indexed | 2024-04-13T07:54:21Z |
| format | Article |
| id | doaj.art-103b5cc9073946c0bacee05da44d92e3 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-04-13T07:54:21Z |
| publishDate | 2019-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-103b5cc9073946c0bacee05da44d92e32022-12-22T02:55:26ZengMDPI AGSensors1424-82202019-12-0120111610.3390/s20010116s20010116A Time-of-Flight Range Sensor Using Four-Tap Lock-In Pixels with High near Infrared Sensitivity for LiDAR ApplicationsSanggwon Lee0Keita Yasutomi1Masato Morita2Hodaka Kawanishi3Shoji Kawahito4Graduate School of Science and Technology, Shizuoka University, Hamamatsu, Shizuoka 432-8011, JapanResearch Institute of Electronics, Shizuoka University, Hamamatsu, Shizuoka 432-8011, JapanGraduate School of Science and Technology, Shizuoka University, Hamamatsu, Shizuoka 432-8011, JapanGraduate School of Science and Technology, Shizuoka University, Hamamatsu, Shizuoka 432-8011, JapanGraduate School of Science and Technology, Shizuoka University, Hamamatsu, Shizuoka 432-8011, JapanIn this paper, a back-illuminated (BSI) time-of-flight (TOF) sensor using 0.2 µm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology is developed for long-range laser imaging detection and ranging (LiDAR) application. A 200 µm-thick bulk silicon in the SOI substrate is fully depleted by applying high negative voltage at the backside for higher quantum efficiency (QE) in a near-infrared (NIR) region. The proposed SOI-based four-tap charge modulator achieves a high-speed charge modulation and high modulation contrast of 71% in a NIR region. In addition, in-pixel drain function is used for short-pulse TOF measurements. A distance measurement up to 27 m is carried out with +1.8~−3.0% linearity error and range resolution of 4.5 cm in outdoor conditions. The measured QE of 55% is attained at 940 nm which is suitable for outdoor use due to the reduced spectral components of solar radiation.https://www.mdpi.com/1424-8220/20/1/116cmos image sensorsoi detectorbackside-illuminationtime-of-flightlock-in pixel |
| spellingShingle | Sanggwon Lee Keita Yasutomi Masato Morita Hodaka Kawanishi Shoji Kawahito A Time-of-Flight Range Sensor Using Four-Tap Lock-In Pixels with High near Infrared Sensitivity for LiDAR Applications Sensors cmos image sensor soi detector backside-illumination time-of-flight lock-in pixel |
| title | A Time-of-Flight Range Sensor Using Four-Tap Lock-In Pixels with High near Infrared Sensitivity for LiDAR Applications |
| title_full | A Time-of-Flight Range Sensor Using Four-Tap Lock-In Pixels with High near Infrared Sensitivity for LiDAR Applications |
| title_fullStr | A Time-of-Flight Range Sensor Using Four-Tap Lock-In Pixels with High near Infrared Sensitivity for LiDAR Applications |
| title_full_unstemmed | A Time-of-Flight Range Sensor Using Four-Tap Lock-In Pixels with High near Infrared Sensitivity for LiDAR Applications |
| title_short | A Time-of-Flight Range Sensor Using Four-Tap Lock-In Pixels with High near Infrared Sensitivity for LiDAR Applications |
| title_sort | time of flight range sensor using four tap lock in pixels with high near infrared sensitivity for lidar applications |
| topic | cmos image sensor soi detector backside-illumination time-of-flight lock-in pixel |
| url | https://www.mdpi.com/1424-8220/20/1/116 |
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