Characterization of single event effect simulation in InP-based High Electron Mobility Transistors

Characterization of single event effect simulation in InP-based High Electron Mobility Transistors

The characteristics and mechanism of single event effects (SEEs) in InP-based High Electron Mobility Transistors (HEMTs) are investigated by technology computer-aided design (TCAD) simulations. The simulation results showed that the transient drain current became the highest after the heavy ion got...

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Bibliographic Details
Main Authors: Shuxiang Sun, Linshuang Liu, Haitao Wu, Ruxian Yao, Hongying Mei, Hua Wen, Yinghui Zhong
Format: Article
Language:English
Published: Elsevier 2022-05-01
Series:Results in Physics
Subjects:
InP based HEMT
SEE
LET
Drain voltage
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379722002182

Internet

http://www.sciencedirect.com/science/article/pii/S2211379722002182

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