Improving Emission Uniformity of InGaN/GaN-Based Vertical LEDs by Using Reflective ITO/Ag n-Contact

Improving Emission Uniformity of InGaN/GaN-Based Vertical LEDs by Using Reflective ITO/Ag n-Contact

We investigated the effect of Ti/Al and ITO/Ag n-type contacts on the emission uniformity and light output of different chip-size vertical-geometry light-emitting diodes (VLEDs) for vehicle headlamp application. The forward voltage of the Ti/Al-based reference VLEDs decreased from 3.38 to 3.20 V at...

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Bibliographic Details
Main Authors: Woong-Sun Yum, Ji-Hyun Koo, Dae-Hee Lee, Young-Hoon Kim, Young-Kyu Jeong, Se-Yeon Jung, Sang-Youl Lee, Hwan-Hee Jeong, Tae-Yeon Seong
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Electronics
Subjects:
light emitting diode
InGaN
reflector
ohmic contact
ITO/Ag
vertical geometry
Online Access:https://www.mdpi.com/2079-9292/10/8/975

Internet

https://www.mdpi.com/2079-9292/10/8/975

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