Non‐Zero and Open‐Loop Current–Voltage Characteristics in Electronic Memory Devices

Non‐Zero and Open‐Loop Current–Voltage Characteristics in Electronic Memory Devices

Abstract This work focuses on the non‐zero‐crossing and open‐loop current–voltage (I–V) characteristics of electronic memory devices that are studied and focused on primarily for non‐volatile memory storage applications. Gold nanoparticles‐based devices are fabricated to understand possible non‐cros...

Full description

Bibliographic Details
Main Authors: Febin Paul, Krishna Nama Manjunatha, Shashi Paul
Format: Article
Language:English
Published: Wiley-VCH 2023-10-01
Series:Advanced Electronic Materials
Subjects:
liquid crystal memory
memristors
non‐volatile memory
non‐zero crossing
non‐zero I–V characteristics
open‐loop electrical behaviors
Online Access:https://doi.org/10.1002/aelm.202300324

Internet

https://doi.org/10.1002/aelm.202300324

Similar Items