Ruddlesden–Popper Tin‐Based Halide Perovskite Field‐Effect Transistors
Tin‐based halide perovskites garner attention as a promising semiconducting layer material for field‐effect transistors (FETs) owing to their lower effective mass than their lead‐based counterparts. However, they suffer from low ambient stability because Sn2+ is readily oxidized to Sn4+ in air. To a...
| Main Authors: | , , , |
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| Format: | Article |
| Sprog: | English |
| Udgivet: |
Wiley-VCH
2024-04-01
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| Serier: | Small Structures |
| Fag: | |
| Online adgang: | https://doi.org/10.1002/sstr.202300393 |