Formation Process and Properties of Ohmic Contacts Containing Molybdenum to AlGaN/GaN Heterostructures

Formation Process and Properties of Ohmic Contacts Containing Molybdenum to AlGaN/GaN Heterostructures

Properties of wide bandgap semiconductors as chemical inertness to harsh conditions and possibility of working at high temperature ensure possible applications in the field as military, aerospace, automotive, engine monitoring, flame detection and solar UV detection. Requirements for ohmic contacts...

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Bibliographic Details
Main Authors: Wojciech Macherzynski, Jacek Gryglewicz, Andrzej Stafiniak, Joanna Prazmowska, Regina Paszkiewicz
Format: Article
Language:English
Published: VSB-Technical University of Ostrava 2016-01-01
Series:Advances in Electrical and Electronic Engineering
Subjects:
algan/gan
ohmic contacts
rta
rtp
surface morphology
ti/al/mo/au.
Online Access:http://advances.utc.sk/index.php/AEEE/article/view/1587

Internet

http://advances.utc.sk/index.php/AEEE/article/view/1587

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