A Process-Based Temperature Compensated On-Chip CMOS VHF VCRO in 130-nm Si-Ge BiCMOS by Implementing an Empirical Control Equation

A Process-Based Temperature Compensated On-Chip CMOS VHF VCRO in 130-nm Si-Ge BiCMOS by Implementing an Empirical Control Equation

This paper presents a low-power CMOS temperature and process compensated 150.9 MHz Very-high-frequency (VHF) voltage-controlled-ring-oscillator (VCRO) for on-chip integration. The design employs a CMOS temperature-sensor and novel feedback control circuitry to generate the internal control-voltage f...

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Bibliographic Details
Main Author: S. M. Rezaul Hasan
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Access
Subjects:
Analog CMOS circuits
temperature compensation
process compensation
voltage-controlled-ring-oscillator
circuit design
VHF
Online Access:https://ieeexplore.ieee.org/document/9975319/

Internet

https://ieeexplore.ieee.org/document/9975319/

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