A Novel Way to Fill Green Gap of GaN-Based LEDs by Pinning Defects in Nanorod Array

A Novel Way to Fill Green Gap of GaN-Based LEDs by Pinning Defects in Nanorod Array

Nanorod array and planar green-emission InGaN/GaN multi-quantum well (MQW) LEDs were fabricated by lithography, nano-imprinting, and top–down etching technology. The defect-pinning effect of the nanostructure was found for the first time. The ratio of the bright regions to the global area in the pan...

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Bibliographic Details
Main Authors: Jinglin Zhan, Zhizhong Chen, Chuhan Deng, Fei Jiao, Xin Xi, Yiyong Chen, Jingxin Nie, Zuojian Pan, Haodong Zhang, Boyan Dong, Xiangning Kang, Qi Wang, Yuzhen Tong, Guoyi Zhang, Bo Shen
Format: Article
Language:English
Published: MDPI AG 2022-11-01
Series:Nanomaterials
Subjects:
GaN-based LEDs
green gap
defect-pinning effect
panchromatic and line-scanning CL
Online Access:https://www.mdpi.com/2079-4991/12/21/3880

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https://www.mdpi.com/2079-4991/12/21/3880

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