INCREASE IN THE ADHESIVE PROPERTIES OF COMMUTATION LAYERS ON SEMICONDUCTOR p-TYPE BRANCHES OF THERMOELECTRIC GENERATOR BATTERIES

Existing studies demonstrate that the main cause of the degradation of switching contacts during the operation of thermoelements based on bismuth telluride are the low strength properties of this material and the insuffi cient adhesion of the barrier metallization layer to the surface of the semicon...

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Main Authors: Evgenii K. Belonogov, Vladislav A. Dybov, Aleksandr V. Kostyuchenko, Sergei B. Kuschev, Dmitrii V. Serikov, Sergei A. Soldatenko, Elena N. Fedorova, Maria A. Pogorelova, Artem O. Roslyakov
Format: Article
Language:English
Published: Voronezh State University 2018-12-01
Series:Конденсированные среды и межфазные границы
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