Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET

Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET

In this article, the impact of interfacial fixed charges on the memory window (MW) of HfO2-based ferroelectric field-effect transistor (FeFET) is investigated using technology computer-aided design (TCAD) device simulations. We have considered the presence of fixed charges at the interface between t...

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Bibliographic Details
Main Authors: Masud Rana Sk, Shubham Pande, Franz Müller, Yannick Raffel, Maximilian Lederer, Luca Pirro, Sven Beyer, Konrad Seidel, Thomas Kämpfe, Sourav De, Bhaswar Chakrabarti
Format: Article
Language:English
Published: Elsevier 2023-07-01
Series:Memories - Materials, Devices, Circuits and Systems
Subjects:
Ferroelectric
FeFETs
Memory window
Fixed charge
Nonvolatile memory (NVM)
Online Access:http://www.sciencedirect.com/science/article/pii/S2773064623000270

Internet

http://www.sciencedirect.com/science/article/pii/S2773064623000270

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