Simulation analysis of electrical characteristics of P-gate enhanced HEMT with C-doped buffer layer
The C-doped P-gate-enhanced HEMT (PEHEMT) is simulated by using the Silvaco T-CAD tool. The interaction among the C acceptor trap, electron, and hole in the buffer layer at different voltages promotes interesting electrical characteristic within the device. In off-state conditions, the peak electric...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0153570 |