Impact of charge noise on electron exchange interactions in semiconductors
Abstract The electron exchange interaction is a promising medium for the entanglement of single-spin qubits in semiconductors as it results in high-speed two-qubit gates. The quality of such entangling gates is reduced by the presence of noise caused by nearby defects acting as two-level fluctuators...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2022-02-01
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| Series: | npj Quantum Information |
| Online Access: | https://doi.org/10.1038/s41534-022-00523-5 |