WS<sub>2</sub> Film by Sputtering and Sulfur-Vapor Annealing, and its <italic>p</italic>MISFET With TiN/HfO<sub>2</sub> Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box

A layered polycrystalline WS<sub>2</sub> film is formed by radio-frequency (RF) magnetron sputtering and sulfur-vapor annealing (SVA). Its <inline-formula> <tex-math notation="LaTeX">$p$ </tex-math></inline-formula>MISFET is successfully demonstrated wit...

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Bibliographic Details
Main Authors: Takuya Hamada, Masaya Hamada, Satoshi Igarashi, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9525137/