WS<sub>2</sub> Film by Sputtering and Sulfur-Vapor Annealing, and its <italic>p</italic>MISFET With TiN/HfO<sub>2</sub> Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box
A layered polycrystalline WS<sub>2</sub> film is formed by radio-frequency (RF) magnetron sputtering and sulfur-vapor annealing (SVA). Its <inline-formula> <tex-math notation="LaTeX">$p$ </tex-math></inline-formula>MISFET is successfully demonstrated wit...
Main Authors: | , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2021-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9525137/ |