Selective Growth of Energy-Band-Controllable In<sub>1−x</sub>Ga<sub>x</sub>As<sub>y</sub>P<sub>1−y</sub> Submicron Wires in V-Shaped Trench on Si

Selective Growth of Energy-Band-Controllable In<sub>1−x</sub>Ga<sub>x</sub>As<sub>y</sub>P<sub>1−y</sub> Submicron Wires in V-Shaped Trench on Si

The In<sub>1−x</sub>Ga<sub>x</sub>As<sub>y</sub>P<sub>1−y</sub> submicron wires with adjustable wavelengths directly grown by metalorganic chemical vapor deposition on a V-groove-patterned Si (001) substrate are reported in this paper. To ensure the ma...

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Bibliographic Details
Main Authors: Wenyu Yang, Zhengxia Yang, Mengqi Wang, Hongyan Yu, Yejin Zhang, Wei Wang, Xuliang Zhou, Jiaoqing Pan
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Crystals
Subjects:
high-resolution X-ray diffraction
growth models
metal-organic chemical vapor deposition
nanomaterials
semiconducting III–V materials
semiconducting silicon
Online Access:https://www.mdpi.com/2073-4352/12/4/476

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https://www.mdpi.com/2073-4352/12/4/476

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