Design Considerations for Boron-Diffused and Implanted 4H-SiC Epitaxial Neutron Detectors for Dosimetry and Monitoring Applications
Thermal-neutron detectors based on 4H-SiC semiconductor and 10B converter reactions have many advantages for neutron dosimetry and monitoring applications. These radiation-resistant detectors are capable of stable operation in elevated-temperature environments up to 700 °C for extended periods. The...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2023-01-01
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| Series: | EPJ Web of Conferences |
| Online Access: | https://www.epj-conferences.org/articles/epjconf/pdf/2023/04/epjconf_isrd2023_01002.pdf |