Suppressing the filament formation by aluminum doping in anatase titanium oxide
For a resistance random access memory whose insulating matrix is based on transition metal oxides, the underlying microscopic mechanism of its conductive filaments is crucial yet challenging to understand. In this paper, our first-principles calculations predict that titanium oxide prefers its anata...
Main Authors: | , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2022-12-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/5.0127412 |