Suppressing the filament formation by aluminum doping in anatase titanium oxide
For a resistance random access memory whose insulating matrix is based on transition metal oxides, the underlying microscopic mechanism of its conductive filaments is crucial yet challenging to understand. In this paper, our first-principles calculations predict that titanium oxide prefers its anata...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0127412 |
| _version_ | 1797947373846003712 |
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| author | Chih-Hung Chung Chiung-Yuan Lin Tsung-Fu Yang Hsin-Hui Huang Tuo-Hung Hou Blanka Magyari-Köpe |
| author_facet | Chih-Hung Chung Chiung-Yuan Lin Tsung-Fu Yang Hsin-Hui Huang Tuo-Hung Hou Blanka Magyari-Köpe |
| author_sort | Chih-Hung Chung |
| collection | DOAJ |
| description | For a resistance random access memory whose insulating matrix is based on transition metal oxides, the underlying microscopic mechanism of its conductive filaments is crucial yet challenging to understand. In this paper, our first-principles calculations predict that titanium oxide prefers its anatase phase over rutile either with or without aluminum doping. We report that an oxygen vacancy in the anatase titanium oxide is stable in its neutral charge state when free of an external field, while it is unstable in the singly and doubly charged states. By calculating the dissociation energy of a single vacancy from a conductive filament, we also study the filament rupture that is modeled by an array of oxygen vacancies, with or without a nearby aluminum dopant. We find that for the dopants at a specific site, the conductive filaments tend to disconnect, which, in turn, enhances the endurance of a non-filamentary resistance random access memory. |
| first_indexed | 2024-04-10T21:25:42Z |
| format | Article |
| id | doaj.art-121191eaa28141c8865e72e710d965a5 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-10T21:25:42Z |
| publishDate | 2022-12-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-121191eaa28141c8865e72e710d965a52023-01-19T16:47:09ZengAIP Publishing LLCAIP Advances2158-32262022-12-011212125212125212-410.1063/5.0127412Suppressing the filament formation by aluminum doping in anatase titanium oxideChih-Hung Chung0Chiung-Yuan Lin1Tsung-Fu Yang2Hsin-Hui Huang3Tuo-Hung Hou4Blanka Magyari-Köpe5Department of Electronics and Electrical Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, TaiwanDepartment of Electronics and Electrical Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, TaiwanDepartment of Electronics and Electrical Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, TaiwanDepartment of Electronics and Electrical Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, TaiwanDepartment of Electronics and Electrical Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, TaiwanDepartment of Electrical Engineering, Stanford University, Stanford, California 94305, USAFor a resistance random access memory whose insulating matrix is based on transition metal oxides, the underlying microscopic mechanism of its conductive filaments is crucial yet challenging to understand. In this paper, our first-principles calculations predict that titanium oxide prefers its anatase phase over rutile either with or without aluminum doping. We report that an oxygen vacancy in the anatase titanium oxide is stable in its neutral charge state when free of an external field, while it is unstable in the singly and doubly charged states. By calculating the dissociation energy of a single vacancy from a conductive filament, we also study the filament rupture that is modeled by an array of oxygen vacancies, with or without a nearby aluminum dopant. We find that for the dopants at a specific site, the conductive filaments tend to disconnect, which, in turn, enhances the endurance of a non-filamentary resistance random access memory.http://dx.doi.org/10.1063/5.0127412 |
| spellingShingle | Chih-Hung Chung Chiung-Yuan Lin Tsung-Fu Yang Hsin-Hui Huang Tuo-Hung Hou Blanka Magyari-Köpe Suppressing the filament formation by aluminum doping in anatase titanium oxide AIP Advances |
| title | Suppressing the filament formation by aluminum doping in anatase titanium oxide |
| title_full | Suppressing the filament formation by aluminum doping in anatase titanium oxide |
| title_fullStr | Suppressing the filament formation by aluminum doping in anatase titanium oxide |
| title_full_unstemmed | Suppressing the filament formation by aluminum doping in anatase titanium oxide |
| title_short | Suppressing the filament formation by aluminum doping in anatase titanium oxide |
| title_sort | suppressing the filament formation by aluminum doping in anatase titanium oxide |
| url | http://dx.doi.org/10.1063/5.0127412 |
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