Suppressing the filament formation by aluminum doping in anatase titanium oxide

For a resistance random access memory whose insulating matrix is based on transition metal oxides, the underlying microscopic mechanism of its conductive filaments is crucial yet challenging to understand. In this paper, our first-principles calculations predict that titanium oxide prefers its anata...

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Bibliographic Details
Main Authors: Chih-Hung Chung, Chiung-Yuan Lin, Tsung-Fu Yang, Hsin-Hui Huang, Tuo-Hung Hou, Blanka Magyari-Köpe
Format: Article
Language:English
Published: AIP Publishing LLC 2022-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0127412

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