A Charge Sensitive Amplifier in a 28 nm CMOS Technology for Pixel Detectors at Future Particle Colliders
This paper is concerned with the design of a Charge Sensitive Amplifier (CSA) in a 28 nm CMOS technology. The CSA discussed in this work is conceived for High Energy Physics (HEP) experiments at next-generation colliders, where pixel detectors will be read out by specific front-end chips, typically...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-04-01
|
| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/12/9/2054 |