A Charge Sensitive Amplifier in a 28 nm CMOS Technology for Pixel Detectors at Future Particle Colliders
This paper is concerned with the design of a Charge Sensitive Amplifier (CSA) in a 28 nm CMOS technology. The CSA discussed in this work is conceived for High Energy Physics (HEP) experiments at next-generation colliders, where pixel detectors will be read out by specific front-end chips, typically...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-04-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/12/9/2054 |
| _version_ | 1797602735673049088 |
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| author | Luigi Gaioni Andrea Galliani Gianluca Traversi |
| author_facet | Luigi Gaioni Andrea Galliani Gianluca Traversi |
| author_sort | Luigi Gaioni |
| collection | DOAJ |
| description | This paper is concerned with the design of a Charge Sensitive Amplifier (CSA) in a 28 nm CMOS technology. The CSA discussed in this work is conceived for High Energy Physics (HEP) experiments at next-generation colliders, where pixel detectors will be read out by specific front-end chips, typically including a CSA exploited for charge-to-voltage conversion of the signal delivered by the sensor. The main analog performance parameters of the CSA, also referred to as the pre-amplifier, are assessed here by means of specific Spectre simulations, which are meant to evaluate the behavior of the analog processor in terms of noise, linearity and capability to compensate for very large detector leakage currents. Noise simulations revealed an equivalent noise charge close to 75 electrons rms for typical operating conditions. Up to 50 nA sensor leakage current can be compensated for thanks to the CSA Keummenacher feedback network. The total current consumption of the CSA is close to 2.2 µA, which, together with a power supply of 0.9 V, translates to a power consumption of 2.0 µW. |
| first_indexed | 2024-03-11T04:20:49Z |
| format | Article |
| id | doaj.art-121f67540e824f1992462b4d8f724278 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-11T04:20:49Z |
| publishDate | 2023-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-121f67540e824f1992462b4d8f7242782023-11-17T22:48:02ZengMDPI AGElectronics2079-92922023-04-01129205410.3390/electronics12092054A Charge Sensitive Amplifier in a 28 nm CMOS Technology for Pixel Detectors at Future Particle CollidersLuigi Gaioni0Andrea Galliani1Gianluca Traversi2Department of Engineering and Applied Sciences, University of Bergamo, 24044 Dalmine, BG, ItalyDepartment of Engineering and Applied Sciences, University of Bergamo, 24044 Dalmine, BG, ItalyDepartment of Engineering and Applied Sciences, University of Bergamo, 24044 Dalmine, BG, ItalyThis paper is concerned with the design of a Charge Sensitive Amplifier (CSA) in a 28 nm CMOS technology. The CSA discussed in this work is conceived for High Energy Physics (HEP) experiments at next-generation colliders, where pixel detectors will be read out by specific front-end chips, typically including a CSA exploited for charge-to-voltage conversion of the signal delivered by the sensor. The main analog performance parameters of the CSA, also referred to as the pre-amplifier, are assessed here by means of specific Spectre simulations, which are meant to evaluate the behavior of the analog processor in terms of noise, linearity and capability to compensate for very large detector leakage currents. Noise simulations revealed an equivalent noise charge close to 75 electrons rms for typical operating conditions. Up to 50 nA sensor leakage current can be compensated for thanks to the CSA Keummenacher feedback network. The total current consumption of the CSA is close to 2.2 µA, which, together with a power supply of 0.9 V, translates to a power consumption of 2.0 µW.https://www.mdpi.com/2079-9292/12/9/2054charge sensitive amplifierpixel sensorslow-noise electronics |
| spellingShingle | Luigi Gaioni Andrea Galliani Gianluca Traversi A Charge Sensitive Amplifier in a 28 nm CMOS Technology for Pixel Detectors at Future Particle Colliders Electronics charge sensitive amplifier pixel sensors low-noise electronics |
| title | A Charge Sensitive Amplifier in a 28 nm CMOS Technology for Pixel Detectors at Future Particle Colliders |
| title_full | A Charge Sensitive Amplifier in a 28 nm CMOS Technology for Pixel Detectors at Future Particle Colliders |
| title_fullStr | A Charge Sensitive Amplifier in a 28 nm CMOS Technology for Pixel Detectors at Future Particle Colliders |
| title_full_unstemmed | A Charge Sensitive Amplifier in a 28 nm CMOS Technology for Pixel Detectors at Future Particle Colliders |
| title_short | A Charge Sensitive Amplifier in a 28 nm CMOS Technology for Pixel Detectors at Future Particle Colliders |
| title_sort | charge sensitive amplifier in a 28 nm cmos technology for pixel detectors at future particle colliders |
| topic | charge sensitive amplifier pixel sensors low-noise electronics |
| url | https://www.mdpi.com/2079-9292/12/9/2054 |
| work_keys_str_mv | AT luigigaioni achargesensitiveamplifierina28nmcmostechnologyforpixeldetectorsatfutureparticlecolliders AT andreagalliani achargesensitiveamplifierina28nmcmostechnologyforpixeldetectorsatfutureparticlecolliders AT gianlucatraversi achargesensitiveamplifierina28nmcmostechnologyforpixeldetectorsatfutureparticlecolliders AT luigigaioni chargesensitiveamplifierina28nmcmostechnologyforpixeldetectorsatfutureparticlecolliders AT andreagalliani chargesensitiveamplifierina28nmcmostechnologyforpixeldetectorsatfutureparticlecolliders AT gianlucatraversi chargesensitiveamplifierina28nmcmostechnologyforpixeldetectorsatfutureparticlecolliders |