The effects of wetting layer on electronic and optical properties of intersubband P-to-S transitions in strained dome-shaped InAs/GaAs quantum dots
The authors report on the impact of wetting layer thickness and quantum dot size on the electronic and optical properties of dome-shaped InAs/GaAs quantum dots (QDs) with strained potential. Two wetting layer thicknesses of 0.5 and 2.0 nm were compared. A strong size dependence of P-to-S transition...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4881980 |