Remarkable Reduction in I<sub>G</sub> with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> Stack Layer AlGaN/GaN MOS-HEMT

Remarkable Reduction in I<sub>G</sub> with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> Stack Layer AlGaN/GaN MOS-HEMT

We demonstrated the performance of an Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> stack layer AlGaN/GaN metal–oxide semiconductor (MOS) high-electron-mobility transistor (HEMT) combined with a dual surface treatment that used tetramethylammonium hydroxide (TMAH) a...

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Bibliographic Details
Main Authors: Soumen Mazumder, Parthasarathi Pal, Kuan-Wei Lee, Yeong-Her Wang
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Materials
Subjects:
Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub>
AlGaN/GaN
MOS-HEMT
post-gate annealing (PGA)
Online Access:https://www.mdpi.com/1996-1944/15/24/9067

Internet

https://www.mdpi.com/1996-1944/15/24/9067

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