Remarkable Reduction in I<sub>G</sub> with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> Stack Layer AlGaN/GaN MOS-HEMT

Remarkable Reduction in I<sub>G</sub> with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> Stack Layer AlGaN/GaN MOS-HEMT

We demonstrated the performance of an Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> stack layer AlGaN/GaN metal–oxide semiconductor (MOS) high-electron-mobility transistor (HEMT) combined with a dual surface treatment that used tetramethylammonium hydroxide (TMAH) a...

Full description

Bibliographic Details
Main Authors:	Soumen Mazumder, Parthasarathi Pal, Kuan-Wei Lee, Yeong-Her Wang
Format:	Article
Language:	English
Published:	MDPI AG 2022-12-01
Series:	Materials
Subjects:	Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> AlGaN/GaN MOS-HEMT post-gate annealing (PGA)
Online Access:	https://www.mdpi.com/1996-1944/15/24/9067

Similar Items

Combined Implications of UV/O<sub>3</sub> Interface Modulation with HfSiO<sub>X</sub> Surface Passivation on AlGaN/AlN/GaN MOS-HEMT
by: Soumen Mazumder, et al.
Published: (2021-01-01)

Performance Enhancement in N<sub>2</sub> Plasma Modified AlGaN/AlN/GaN MOS-HEMT Using HfAlO<sub>X</sub> Gate Dielectric with Γ-Shaped Gate Engineering
by: Shun-Kai Yang, et al.
Published: (2021-03-01)

AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO<sub>2</sub> as Passivation and Dielectric Layers
by: Yu-Shyan Lin, et al.
Published: (2023-05-01)

Investigation of AlGaN Channel HEMTs on β-Ga<sub>2</sub>O<sub>3</sub> Substrate for High-Power Electronics
by: A. Revathy, et al.
Published: (2022-01-01)

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiN<sub>x</sub>/SiON as Composite Gate Dielectric
by: Xiaodong Zhang, et al.
Published: (2022-03-01)

Effects of Al Composition and High-Temperature Atomic Layer-Deposited Al<sub>2</sub>O<sub>3</sub> Layer on the Leakage Current Characteristics of AlGaN/GaN Schottky Barrier Diodes
by: Jae-Hoon Lee, et al.
Published: (2021-01-01)

Current Drops in CF<sub>4</sub> Plasma-Treated AlGaN/GaN Heterojunction in Polar Gas Ambient
by: Ying Ma, et al.
Published: (2023-04-01)

Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al<sub>2</sub>O<sub>3</sub>/ZrO<sub>2</sub> Stacked Gate Dielectrics
by: Cheng-Yu Huang, et al.
Published: (2022-10-01)

Enhanced Operational Characteristics Attained by Applying HfO<sub>2</sub> as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study
by: Jun-Hyeok Choi, et al.
Published: (2023-05-01)

AlGaN/GaN MIS-HEMTs With High Quality ALD-Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
by: Huan-Chung Wang, et al.
Published: (2018-01-01)

Development of Catalytic-CVD SiN<sub>x</sub> Passivation Process for AlGaN/GaN-on-Si HEMTs
by: Myoung-Jin Kang, et al.
Published: (2020-09-01)

Comprehensive Comparison of MOCVD- and LPCVD-SiN<sub>x</sub> Surface Passivation for AlGaN/GaN HEMTs for 5G RF Applications
by: Longge Deng, et al.
Published: (2023-11-01)

Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiN<sub>x</sub> Gate Dielectric at Different Temperatures
by: Dongsheng Zhao, et al.
Published: (2024-01-01)

MOCVD-grown β-Ga<sub>2</sub>O<sub>3</sub> as a Gate Dielectric on AlGaN/GaN-Based Heterojunction Field Effect Transistor
by: Samiul Hasan, et al.
Published: (2023-01-01)

Low-Power pH Sensor Based on Narrow Channel Open-Gated Al<sub>0.25</sub>Ga<sub>0.75</sub>N/GaN HEMT and Package Integrated Polydimethylsiloxane Microchannels
by: Xianghong Yang, et al.
Published: (2020-11-01)

Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using <i>Y<sub>21</sub></i> Frequency Dispersion Properties
by: P. Vigneshwara Raja, et al.
Published: (2021-12-01)

Fabrication and Characterization of In<sub>0.53</sub>Ga<sub>0.47</sub>As/InAs/In<sub>0.53</sub>Ga<sub>0.47</sub>As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate
by: Seung Heon Shin, et al.
Published: (2022-12-01)

Effective Suppression of Current Collapse in AlGaN/GaN HEMT With N<sub>2</sub>O Plasma Treatment Followed by High Temperature Annealing in N<sub>2</sub> Ambience
by: Jingxiong Chen, et al.
Published: (2022-01-01)

Investigation of the Effect of Different SiN<sub>x</sub> Thicknesses on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors in Ka-Band
by: Che-Wei Hsu, et al.
Published: (2023-10-01)

A Novel AlGaN/Si<sub>3</sub>N<sub>4</sub> Compound Buffer Layer HEMT with Improved Breakdown Performances
by: Jingwei Guo, et al.
Published: (2022-03-01)

Comparative Study on the Activity of GaF<sub>3</sub> and Ga<sub>2</sub>O<sub>3</sub> Nanoparticle-Doped CsF-AlF<sub>3</sub> Flux for Brazing 6061 Al/Q235 Steel Joints
by: Zhen Yao, et al.
Published: (2020-06-01)

Investigation of AlGaN/GaN HFET and VO<sub>2</sub> Thin Film Based Deflection Transducers Embedded in GaN Microcantilevers
by: Ferhat Bayram, et al.
Published: (2020-09-01)

Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub> Dual-Layer Insulator
by: So-Ra Min, et al.
Published: (2022-01-01)

Comparative Study of Growth Morphologies of Ga<sub>2</sub>O<sub>3</sub> Nanowires on Different Substrates
by: Badriyah Alhalaili, et al.
Published: (2020-09-01)

Effect of Various Nanoparticles (GaF<sub>3</sub>, ZnF<sub>2</sub>, Zn(BF<sub>4</sub>)<sub>2</sub> and Ga<sub>2</sub>O<sub>3</sub>) Additions on the Activity of CsF-RbF-AlF<sub>3</sub> Flux and Mechanical Behavior of Al/Steel Brazed Joints
by: Zhen Yao, et al.
Published: (2020-08-01)

The Heteroepitaxy of Thick <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Film on Sapphire Substrate with a <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> Intermediate Buffer Layer
by: Wenhui Zhang, et al.
Published: (2023-03-01)

Investigations of Nanoscale Columnar Al<sub>x</sub>Ga<sub>1-x</sub>N/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface
by: Pavel Vladimirovich Seredin, et al.
Published: (2023-10-01)

Polarization-Charge Inversion at Al<sub>2</sub>O<sub>3</sub>/GaN Interfaces through Post-Deposition Annealing
by: Kwangeun Kim, et al.
Published: (2020-06-01)

Influence of Silver as a Catalyst on the Growth of β-Ga<sub>2</sub>O<sub>3</sub> Nanowires on GaAs
by: Badriyah Alhalaili, et al.
Published: (2020-11-01)

O<sub>2</sub> Plasma Alternately Treated ALD-Al<sub>2</sub>O<sub>3</sub> as Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs
by: Qiang Wang, et al.
Published: (2024-01-01)

Characterization and Reliability Analysis of Enhancement-Mode PEALD AlN/LPCVD SiN<sub>x</sub> GaN MISFET with In Situ H<sub>2</sub>/N<sub>2</sub> Plasma Pretreatment
by: Chengyu Huang, et al.
Published: (2023-10-01)

Micro-Nanoarchitectonics of Ga<sub>2</sub>O<sub>3</sub>/GaN Core-Shell Rod Arrays for High-Performance Broadband Ultraviolet Photodetection
by: Ruifan Tang, et al.
Published: (2023-02-01)

Crucial Role of Oxygen Vacancies in Scintillation and Optical Properties of Undoped and Al-Doped β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals
by: Ruifeng Tian, et al.
Published: (2022-03-01)

Impact of Charge-Trapping Effects on Reliability Instability in Al<sub>x</sub>Ga<sub>1−x</sub>N/GaN High-Electron-Mobility Transistors with Various Al Compositions
by: Walid Amir, et al.
Published: (2023-06-01)

Ga<sub>2</sub>O<sub>3</sub>/Ag/Ga<sub>2</sub>O<sub>3</sub>-Laminated Film Fabricated at Room Temperature: Toward Applications in Ultraviolet Transparent Highly Conductive Electrodes
by: Kexiong Zhang, et al.
Published: (2023-06-01)

Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO<sub>2</sub> Gate Dielectric
by: Min Jae Yeom, et al.
Published: (2021-11-01)

Influence of O<sub>2</sub> Flow Rate on the Properties of Ga<sub>2</sub>O<sub>3</sub> Growth by RF Magnetron Sputtering
by: Dengyue Li, et al.
Published: (2023-01-01)

Inducing the Effect of a Ga<sub>2</sub>O<sub>3</sub> Nano-Particle on the CsF-RbF-AlF<sub>3</sub> Flux for Brazing Aluminum to Carbon Steels
by: Zhen Yao, et al.
Published: (2020-03-01)

A Selective Etching Route for Large-Scale Fabrication of β-Ga<sub>2</sub>O<sub>3</sub> Micro-/Nanotube Arrays
by: Shan Ding, et al.
Published: (2021-12-01)

Operation Up to 500 °C of Al<sub>0.85</sub>Ga<sub>0.15</sub>N/Al<sub>0.7</sub>Ga<sub>0.3</sub>N High Electron Mobility Transistors
by: Patrick H. Carey, et al.
Published: (2019-01-01)