Channel Modeling and Quantization Design for 3D NAND Flash Memory

As the technology scales down, two-dimensional (2D) NAND flash memory has reached its bottleneck. Three-dimensional (3D) NAND flash memory was proposed to further increase the storage capacity by vertically stacking multiple layers. However, the new architecture of 3D flash memory leads to new sourc...

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Bibliographic Details
Main Authors: Cheng Wang, Zhen Mei, Jun Li, Feng Shu, Xuan He, Lingjun Kong
Format: Article
Language:English
Published: MDPI AG 2023-06-01
Series:Entropy
Subjects:
Online Access:https://www.mdpi.com/1099-4300/25/7/965