First-principles calculations on the diffusion and electronic properties of CuI doped by cation and anion

CuI has attracted much attention for the optoelectronic devices due to the wide band gap of 3.1 eV (p-type). Previous theoretical and experimental results demonstrate doping successfully tunes stability of the intrinsic defects in CuI. We study the diffusion and electronic properties of CuI doped wi...

Full description

Bibliographic Details
Main Authors: Lingchun Jia, Yingli Chang, Ge Song, Xiaolin Liu, Mu Gu, Jiajie Zhu
Format: Article
Language:English
Published: Elsevier 2022-07-01
Series:Results in Physics
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379722003138