Design, Modeling and Analysis of Perforated RF MEMS Capacitive Shunt Switch
This paper illustrates the design, modeling, and analysis of bridge type structure based capacitive RF MEMS switch with different beam thickness and materials. We have used Ashby's approach to select the best materials in each and every level which helped to improve the overall performance of t...
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| Format: | Article |
| Language: | English |
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IEEE
2019-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/8704302/ |
| _version_ | 1819133000220147712 |
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| author | K. Srinivasa Rao Ch. Gopi Chand K. Girija Sravani D. Prathyusha P. Naveena G. Sai Lakshmi P. Ashok Kumar T. Lakshmi Narayana |
| author_facet | K. Srinivasa Rao Ch. Gopi Chand K. Girija Sravani D. Prathyusha P. Naveena G. Sai Lakshmi P. Ashok Kumar T. Lakshmi Narayana |
| author_sort | K. Srinivasa Rao |
| collection | DOAJ |
| description | This paper illustrates the design, modeling, and analysis of bridge type structure based capacitive RF MEMS switch with different beam thickness and materials. We have used Ashby's approach to select the best materials in each and every level which helped to improve the overall performance of the switch in terms of mechanical, electrical, and RF properties. Silicon Nitride thin film (ε<sub>r</sub> = 7.8) is used as a dielectric material. The beam structure stiffness is analyzed with different materials, such as gold, titanium, and platinum, within these materials gold with high thermal conductivity and Euler-Young's modulus of 77 GPa is offering the best performance. Incorporation of meanders and perforations to the membrane helped to reduce the pull-in voltage. The proposed switch is offering very low pull-in voltage of 1.9 V. The deflection of beam thickness is tabulated for the three materials among them the 2 ţm thickness is best beam thickness for the switch for X-band applications. The switch offers best return loss (S<sub>11</sub>) of -21.36 dB, insertion loss (S<sub>12</sub>) of -0.147 dB, and isolation (S<sub>21</sub>) of -52.04 dB at 8GHz. The switch presented in this paper is preferable in X-band applications. |
| first_indexed | 2024-12-22T09:40:20Z |
| format | Article |
| id | doaj.art-12c793f2b82745cabea8012d215636e9 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-22T09:40:20Z |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-12c793f2b82745cabea8012d215636e92022-12-21T18:30:43ZengIEEEIEEE Access2169-35362019-01-017748697487810.1109/ACCESS.2019.29142608704302Design, Modeling and Analysis of Perforated RF MEMS Capacitive Shunt SwitchK. Srinivasa Rao0https://orcid.org/0000-0003-1239-5196Ch. Gopi Chand1K. Girija Sravani2https://orcid.org/0000-0002-9927-1833D. Prathyusha3P. Naveena4G. Sai Lakshmi5P. Ashok Kumar6T. Lakshmi Narayana7Department of Electronics and Communication Engineering, MEMS Research Center, KL University, Guntur, IndiaDept. of Electron. & Commun. Eng., KL Univ., Guntur, IndiaDepartment of Electronics and Communication Engineering, MEMS Research Center, KL University, Guntur, IndiaDepartment of Electronics and Communication Engineering, MEMS Research Center, KL University, Guntur, IndiaDepartment of Electronics and Communication Engineering, MEMS Research Center, KL University, Guntur, IndiaDepartment of Electronics and Communication Engineering, MEMS Research Center, KL University, Guntur, IndiaDepartment of Electronics and Communication Engineering, MEMS Research Center, KL University, Guntur, IndiaDepartment of Electronics and Communication Engineering, MEMS Research Center, KL University, Guntur, IndiaThis paper illustrates the design, modeling, and analysis of bridge type structure based capacitive RF MEMS switch with different beam thickness and materials. We have used Ashby's approach to select the best materials in each and every level which helped to improve the overall performance of the switch in terms of mechanical, electrical, and RF properties. Silicon Nitride thin film (ε<sub>r</sub> = 7.8) is used as a dielectric material. The beam structure stiffness is analyzed with different materials, such as gold, titanium, and platinum, within these materials gold with high thermal conductivity and Euler-Young's modulus of 77 GPa is offering the best performance. Incorporation of meanders and perforations to the membrane helped to reduce the pull-in voltage. The proposed switch is offering very low pull-in voltage of 1.9 V. The deflection of beam thickness is tabulated for the three materials among them the 2 ţm thickness is best beam thickness for the switch for X-band applications. The switch offers best return loss (S<sub>11</sub>) of -21.36 dB, insertion loss (S<sub>12</sub>) of -0.147 dB, and isolation (S<sub>21</sub>) of -52.04 dB at 8GHz. The switch presented in this paper is preferable in X-band applications.https://ieeexplore.ieee.org/document/8704302/Fixed-fixed membranespring constantpull-in voltageswitching timeX-bandmaterial science |
| spellingShingle | K. Srinivasa Rao Ch. Gopi Chand K. Girija Sravani D. Prathyusha P. Naveena G. Sai Lakshmi P. Ashok Kumar T. Lakshmi Narayana Design, Modeling and Analysis of Perforated RF MEMS Capacitive Shunt Switch IEEE Access Fixed-fixed membrane spring constant pull-in voltage switching time X-band material science |
| title | Design, Modeling and Analysis of Perforated RF MEMS Capacitive Shunt Switch |
| title_full | Design, Modeling and Analysis of Perforated RF MEMS Capacitive Shunt Switch |
| title_fullStr | Design, Modeling and Analysis of Perforated RF MEMS Capacitive Shunt Switch |
| title_full_unstemmed | Design, Modeling and Analysis of Perforated RF MEMS Capacitive Shunt Switch |
| title_short | Design, Modeling and Analysis of Perforated RF MEMS Capacitive Shunt Switch |
| title_sort | design modeling and analysis of perforated rf mems capacitive shunt switch |
| topic | Fixed-fixed membrane spring constant pull-in voltage switching time X-band material science |
| url | https://ieeexplore.ieee.org/document/8704302/ |
| work_keys_str_mv | AT ksrinivasarao designmodelingandanalysisofperforatedrfmemscapacitiveshuntswitch AT chgopichand designmodelingandanalysisofperforatedrfmemscapacitiveshuntswitch AT kgirijasravani designmodelingandanalysisofperforatedrfmemscapacitiveshuntswitch AT dprathyusha designmodelingandanalysisofperforatedrfmemscapacitiveshuntswitch AT pnaveena designmodelingandanalysisofperforatedrfmemscapacitiveshuntswitch AT gsailakshmi designmodelingandanalysisofperforatedrfmemscapacitiveshuntswitch AT pashokkumar designmodelingandanalysisofperforatedrfmemscapacitiveshuntswitch AT tlakshminarayana designmodelingandanalysisofperforatedrfmemscapacitiveshuntswitch |