Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials

Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials

We report the growth of nanoscale hafnium dioxide (HfO<sub>2</sub>) and zirconium dioxide (ZrO<sub>2</sub>) thin films using remote plasma-enhanced atomic layer deposition (PE-ALD), and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits usin...

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Bibliographic Details
Main Authors: Zhigang Xiao, Kim Kisslinger, Sam Chance, Samuel Banks
Format: Article
Language:English
Published: MDPI AG 2020-02-01
Series:Crystals
Subjects:
hafnium dioxide (hfo<sub>2</sub>) thin film
zirconium dioxide (zro<sub>2</sub>) thin films
complementary metal-oxide semiconductor (cmos) integrated circuits
cmos ring oscillator
Online Access:https://www.mdpi.com/2073-4352/10/2/136

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https://www.mdpi.com/2073-4352/10/2/136

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