Impact of device resistances in the performance of graphene-based terahertz photodetectors

Impact of device resistances in the performance of graphene-based terahertz photodetectors

Abstract In recent years, graphene field-effect-transistors (GFETs) have demonstrated an outstanding potential for terahertz (THz) photodetection due to their fast response and high-sensitivity. Such features are essential to enable emerging THz applications, including 6G wireless communications, qu...

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Bibliographic Details
Main Authors: O. Castelló, Sofía M. López Baptista, K. Watanabe, T. Taniguchi, E. Diez, J. E. Velázquez-Pérez, Y. M. Meziani, J. M. Caridad, J. A. Delgado-Notario
Format: Article
Language:English
Published: Springer & Higher Education Press 2024-06-01
Series:Frontiers of Optoelectronics
Subjects:
Graphene
THz
Photodetector
Field-effect transistor
Plasmonic
Online Access:https://doi.org/10.1007/s12200-024-00122-6

Internet

https://doi.org/10.1007/s12200-024-00122-6

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