Effectiveness of <italic>c</italic>-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM

Effectiveness of <italic>c</italic>-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM

Aiming to reduce the area of a ferroelectric random access memory (FeRAM), we fabricated an FeRAM having a 1T1C configuration by using a <inline-formula> <tex-math notation="LaTeX">${c}$ </tex-math></inline-formula>-axis aligned crystalline In-Ga-Zn-O field-effect t...

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Bibliographic Details
Main Authors: Naomi Yazaki, Ryosuke Motoyoshi, Shiyu Numata, Kazuaki Ohshima, Yuji Egi, Fumito Isaka, Toshikazu Ohno, Sachiaki Tezuka, Toshiki Hamada, Kazuma Furutani, Kazuki Tsuda, Takanori Matsuzaki, Tatsuya Onuki, Tsutomu Murakawa, Hitoshi Kunitake, Masaharu Kobayashi, Shunpei Yamazaki
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
C-axis aligned crystalline In-Ga-Zn-O (CAAC-IGZO)
1T1C
FeRAM
single damascene
Online Access:https://ieeexplore.ieee.org/document/10225501/

Internet

https://ieeexplore.ieee.org/document/10225501/

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