Effectiveness of <italic>c</italic>-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM
Aiming to reduce the area of a ferroelectric random access memory (FeRAM), we fabricated an FeRAM having a 1T1C configuration by using a <inline-formula> <tex-math notation="LaTeX">${c}$ </tex-math></inline-formula>-axis aligned crystalline In-Ga-Zn-O field-effect t...
| Main Authors: | , , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2023-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10225501/ |
| _version_ | 1797342287787720704 |
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| author | Naomi Yazaki Ryosuke Motoyoshi Shiyu Numata Kazuaki Ohshima Yuji Egi Fumito Isaka Toshikazu Ohno Sachiaki Tezuka Toshiki Hamada Kazuma Furutani Kazuki Tsuda Takanori Matsuzaki Tatsuya Onuki Tsutomu Murakawa Hitoshi Kunitake Masaharu Kobayashi Shunpei Yamazaki |
| author_facet | Naomi Yazaki Ryosuke Motoyoshi Shiyu Numata Kazuaki Ohshima Yuji Egi Fumito Isaka Toshikazu Ohno Sachiaki Tezuka Toshiki Hamada Kazuma Furutani Kazuki Tsuda Takanori Matsuzaki Tatsuya Onuki Tsutomu Murakawa Hitoshi Kunitake Masaharu Kobayashi Shunpei Yamazaki |
| author_sort | Naomi Yazaki |
| collection | DOAJ |
| description | Aiming to reduce the area of a ferroelectric random access memory (FeRAM), we fabricated an FeRAM having a 1T1C configuration by using a <inline-formula> <tex-math notation="LaTeX">${c}$ </tex-math></inline-formula>-axis aligned crystalline In-Ga-Zn-O field-effect transistor, which we call OSFET, with a high breakdown voltage. A combination of the OSFET with <inline-formula> <tex-math notation="LaTeX">${L}/{W}$ </tex-math></inline-formula> of 60 nm/60 nm and a single damascene ferroelectric capacitor (FE-Cap) attained FE-Cap area reduction to <inline-formula> <tex-math notation="LaTeX">$0.06~\mu \text{m}~^{\mathrm{ 2}}$ </tex-math></inline-formula> per cell. The FeRAM achieved a write time of 10 ns, a rewriting endurance of 109 cycles, and a data retention time of 100 min at 85°C. The OSFET is an optimal selector element for emerging memories. |
| first_indexed | 2024-03-08T10:31:07Z |
| format | Article |
| id | doaj.art-130a499579cf486f97ff60e88658e798 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-03-08T10:31:07Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-130a499579cf486f97ff60e88658e7982024-01-27T00:01:30ZengIEEEIEEE Journal of the Electron Devices Society2168-67342023-01-011146747210.1109/JEDS.2023.330712410225501Effectiveness of <italic>c</italic>-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAMNaomi Yazaki0https://orcid.org/0009-0007-7561-2959Ryosuke Motoyoshi1Shiyu Numata2Kazuaki Ohshima3https://orcid.org/0000-0002-7133-2112Yuji Egi4Fumito Isaka5Toshikazu Ohno6Sachiaki Tezuka7Toshiki Hamada8https://orcid.org/0009-0004-9978-1472Kazuma Furutani9Kazuki Tsuda10https://orcid.org/0000-0002-4840-4851Takanori Matsuzaki11Tatsuya Onuki12https://orcid.org/0000-0002-8874-8165Tsutomu Murakawa13https://orcid.org/0000-0001-5761-866XHitoshi Kunitake14https://orcid.org/0000-0003-1187-4590Masaharu Kobayashi15https://orcid.org/0000-0002-7945-6136Shunpei Yamazaki16https://orcid.org/0000-0001-6055-8987NOS Development Division, Semiconductor Energy Laboratory Co. Ltd., Atsugi, JapanNOS Development Division, Semiconductor Energy Laboratory Co. Ltd., Atsugi, JapanNOS Development Division, Semiconductor Energy Laboratory Co. Ltd., Atsugi, JapanCAD Division, Semiconductor Energy Laboratory Co. Ltd., Atsugi, JapanNOS Development Division, Semiconductor Energy Laboratory Co. Ltd., Atsugi, JapanNOS Development Division, Semiconductor Energy Laboratory Co. Ltd., Atsugi, JapanNOS Development Division, Semiconductor Energy Laboratory Co. Ltd., Atsugi, JapanNOS Development Division, Semiconductor Energy Laboratory Co. Ltd., Atsugi, JapanNOS Development Division, Semiconductor Energy Laboratory Co. Ltd., Atsugi, JapanCAD Division, Semiconductor Energy Laboratory Co. Ltd., Atsugi, JapanNOS Development Division, Semiconductor Energy Laboratory Co. Ltd., Atsugi, JapanCAD Division, Semiconductor Energy Laboratory Co. Ltd., Atsugi, JapanNOS Development Division, Semiconductor Energy Laboratory Co. Ltd., Atsugi, JapanNOS Development Division, Semiconductor Energy Laboratory Co. Ltd., Atsugi, JapanNOS Development Division, Semiconductor Energy Laboratory Co. Ltd., Atsugi, JapanSchool of Engineering Co. Ltd., The University of Tokyo, Tokyo, JapanSemiconductor Energy Laboratory Co. Ltd., Atsugi, JapanAiming to reduce the area of a ferroelectric random access memory (FeRAM), we fabricated an FeRAM having a 1T1C configuration by using a <inline-formula> <tex-math notation="LaTeX">${c}$ </tex-math></inline-formula>-axis aligned crystalline In-Ga-Zn-O field-effect transistor, which we call OSFET, with a high breakdown voltage. A combination of the OSFET with <inline-formula> <tex-math notation="LaTeX">${L}/{W}$ </tex-math></inline-formula> of 60 nm/60 nm and a single damascene ferroelectric capacitor (FE-Cap) attained FE-Cap area reduction to <inline-formula> <tex-math notation="LaTeX">$0.06~\mu \text{m}~^{\mathrm{ 2}}$ </tex-math></inline-formula> per cell. The FeRAM achieved a write time of 10 ns, a rewriting endurance of 109 cycles, and a data retention time of 100 min at 85°C. The OSFET is an optimal selector element for emerging memories.https://ieeexplore.ieee.org/document/10225501/C-axis aligned crystalline In-Ga-Zn-O (CAAC-IGZO)1T1CFeRAMsingle damascene |
| spellingShingle | Naomi Yazaki Ryosuke Motoyoshi Shiyu Numata Kazuaki Ohshima Yuji Egi Fumito Isaka Toshikazu Ohno Sachiaki Tezuka Toshiki Hamada Kazuma Furutani Kazuki Tsuda Takanori Matsuzaki Tatsuya Onuki Tsutomu Murakawa Hitoshi Kunitake Masaharu Kobayashi Shunpei Yamazaki Effectiveness of <italic>c</italic>-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM IEEE Journal of the Electron Devices Society C-axis aligned crystalline In-Ga-Zn-O (CAAC-IGZO) 1T1C FeRAM single damascene |
| title | Effectiveness of <italic>c</italic>-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM |
| title_full | Effectiveness of <italic>c</italic>-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM |
| title_fullStr | Effectiveness of <italic>c</italic>-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM |
| title_full_unstemmed | Effectiveness of <italic>c</italic>-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM |
| title_short | Effectiveness of <italic>c</italic>-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM |
| title_sort | effectiveness of italic c italic axis aligned crystalline igzo fet as selector element and ferroelectric capacitor scaling of 1t1c feram |
| topic | C-axis aligned crystalline In-Ga-Zn-O (CAAC-IGZO) 1T1C FeRAM single damascene |
| url | https://ieeexplore.ieee.org/document/10225501/ |
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