Memristor Degradation Analysis Using Auxiliary Volt-Ampere Characteristics

Memristor Degradation Analysis Using Auxiliary Volt-Ampere Characteristics

The memristor is one of the modern microelectronics key devices. Due to the nanometer scale and complex processes physic, the development of memristor state study approaches faces limitations of classical methods to observe the processes. We propose a new approach to investigate the degradation of s...

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Bibliographic Details
Main Authors: Georgy Teplov, Dmitry Zhevnenko, Fedor Meshchaninov, Vladislav Kozhevnikov, Pavel Sattarov, Sergey Kuznetsov, Alikhan Magomedrasulov, Oleg Telminov, Evgeny Gornev
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Micromachines
Subjects:
memristor
silicon nitride
degradation
compact modeling
Online Access:https://www.mdpi.com/2072-666X/13/10/1691

Internet

https://www.mdpi.com/2072-666X/13/10/1691

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