Multi-level operation in VO2-based resistive switching devices
Vanadium dioxide (VO2) is widely studied for its prominent insulator–metal transition (IMT) near room temperature, with potential applications in novel memory devices and brain-inspired neuromorphic computing. We report on the fabrication of in-plane VO2 metal–insulator–metal structures and reproduc...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0077160 |