Preparation and relevant properties of amorphous AlBN dielectric films
Amorphous AlBN dielectric films were deposited on GaN (002) by pulsed laser deposition (PLD). The crystal structure and composition of the grown films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). Conductive atomic f...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Journal of Materials Engineering
2020-06-01
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| Series: | Cailiao gongcheng |
| Subjects: | |
| Online Access: | http://jme.biam.ac.cn/CN/Y2020/V48/I6/112 |