Preparation and relevant properties of amorphous AlBN dielectric films
Amorphous AlBN dielectric films were deposited on GaN (002) by pulsed laser deposition (PLD). The crystal structure and composition of the grown films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). Conductive atomic f...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | zho |
| Published: |
Journal of Materials Engineering
2020-06-01
|
| Series: | Cailiao gongcheng |
| Subjects: | |
| Online Access: | http://jme.biam.ac.cn/CN/Y2020/V48/I6/112 |
| _version_ | 1828074910737498112 |
|---|---|
| author | LIU Feng-feng LI Yu-xiong SUI Zhan-peng CAI Yong ZHANG Yong-hong JIANG Chun-ping |
| author_facet | LIU Feng-feng LI Yu-xiong SUI Zhan-peng CAI Yong ZHANG Yong-hong JIANG Chun-ping |
| author_sort | LIU Feng-feng |
| collection | DOAJ |
| description | Amorphous AlBN dielectric films were deposited on GaN (002) by pulsed laser deposition (PLD). The crystal structure and composition of the grown films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). Conductive atomic force microscope (CAFM) and <i>I-V</i> methods were also used to test the electrical properties of films with different thickness. The results show that the AlBN dielectric films with different thickness is amorphous, and the content of boron in all the films is about 6.7%(atom fraction). The root-mean-aquare (RMS) surface roughness <i>R</i><sub>q</sub> of the films with thickness of 3 nm and 18 nm are only 0.209 nm and 0.116 nm, respectively, indicating smooth surface of these AlBN film. When the voltage of ±10 V is applied, there is no obvious leakage current in the film with a thicknes of 18 nm. However, in the metal-insulator-metal (MIM) structure, a large leakage current appears in the 18 nm thin film structure, and the leakage current density is about -2×10<sup>-4</sup> A/cm<sup>2</sup> at -2 V. |
| first_indexed | 2024-04-11T01:50:33Z |
| format | Article |
| id | doaj.art-135fe53dbf144e2e89ffda5ff4ed405d |
| institution | Directory Open Access Journal |
| issn | 1001-4381 1001-4381 |
| language | zho |
| last_indexed | 2024-04-11T01:50:33Z |
| publishDate | 2020-06-01 |
| publisher | Journal of Materials Engineering |
| record_format | Article |
| series | Cailiao gongcheng |
| spelling | doaj.art-135fe53dbf144e2e89ffda5ff4ed405d2023-01-03T06:24:14ZzhoJournal of Materials EngineeringCailiao gongcheng1001-43811001-43812020-06-0148611211710.11868/j.issn.1001-4381.2019.00032320200613Preparation and relevant properties of amorphous AlBN dielectric filmsLIU Feng-feng0LI Yu-xiong1SUI Zhan-peng2CAI Yong3ZHANG Yong-hong4JIANG Chun-ping5School of Nano-tech and Nano-bionics, University of Science and Technology of China, Hefei 230026, China;School of Nano-tech and Nano-bionics, University of Science and Technology of China, Hefei 230026, China;Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu, China;Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu, China;Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu, ChinaKey Lab of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu, China;Amorphous AlBN dielectric films were deposited on GaN (002) by pulsed laser deposition (PLD). The crystal structure and composition of the grown films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). Conductive atomic force microscope (CAFM) and <i>I-V</i> methods were also used to test the electrical properties of films with different thickness. The results show that the AlBN dielectric films with different thickness is amorphous, and the content of boron in all the films is about 6.7%(atom fraction). The root-mean-aquare (RMS) surface roughness <i>R</i><sub>q</sub> of the films with thickness of 3 nm and 18 nm are only 0.209 nm and 0.116 nm, respectively, indicating smooth surface of these AlBN film. When the voltage of ±10 V is applied, there is no obvious leakage current in the film with a thicknes of 18 nm. However, in the metal-insulator-metal (MIM) structure, a large leakage current appears in the 18 nm thin film structure, and the leakage current density is about -2×10<sup>-4</sup> A/cm<sup>2</sup> at -2 V.http://jme.biam.ac.cn/CN/Y2020/V48/I6/112albnpulsed laser depositionamorphous film |
| spellingShingle | LIU Feng-feng LI Yu-xiong SUI Zhan-peng CAI Yong ZHANG Yong-hong JIANG Chun-ping Preparation and relevant properties of amorphous AlBN dielectric films Cailiao gongcheng albn pulsed laser deposition amorphous film |
| title | Preparation and relevant properties of amorphous AlBN dielectric films |
| title_full | Preparation and relevant properties of amorphous AlBN dielectric films |
| title_fullStr | Preparation and relevant properties of amorphous AlBN dielectric films |
| title_full_unstemmed | Preparation and relevant properties of amorphous AlBN dielectric films |
| title_short | Preparation and relevant properties of amorphous AlBN dielectric films |
| title_sort | preparation and relevant properties of amorphous albn dielectric films |
| topic | albn pulsed laser deposition amorphous film |
| url | http://jme.biam.ac.cn/CN/Y2020/V48/I6/112 |
| work_keys_str_mv | AT liufengfeng preparationandrelevantpropertiesofamorphousalbndielectricfilms AT liyuxiong preparationandrelevantpropertiesofamorphousalbndielectricfilms AT suizhanpeng preparationandrelevantpropertiesofamorphousalbndielectricfilms AT caiyong preparationandrelevantpropertiesofamorphousalbndielectricfilms AT zhangyonghong preparationandrelevantpropertiesofamorphousalbndielectricfilms AT jiangchunping preparationandrelevantpropertiesofamorphousalbndielectricfilms |