Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography

Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography

This work describes the construction of a sensitive, stable, and label-free sensor based on a dual-gate field-effect transistor (DG FET), in which uniformly distributed and size-controlled silicon nanowire (SiNW) arrays by nanoimprint lithography act as conductor channels. Compared to previous DG FE...

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Bibliographic Details
Main Authors: Cheol-Min Lim, In-Kyu Lee, Ki Joong Lee, Young Kyoung Oh, Yong-Beom Shin, Won-Ju Cho
Format: Article
Language:English
Published: Taylor & Francis Group 2017-12-01
Series:Science and Technology of Advanced Materials
Subjects:
Dual-gate field-effect transistor
silicon nanowire
nanoimprint lithography
ion-sensitive field-effect transistor
pH sensor
capacitive coupling
Online Access:http://dx.doi.org/10.1080/14686996.2016.1253409

Internet

http://dx.doi.org/10.1080/14686996.2016.1253409

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