Remaining Useful Life Estimation of Insulated Gate Biploar Transistors (IGBTs) Based on a Novel Volterra k-Nearest Neighbor Optimally Pruned Extreme Learning Machine (VKOPP) Model Using Degradation Data
The insulated gate bipolar transistor (IGBT) is a kind of excellent performance switching device used widely in power electronic systems. How to estimate the remaining useful life (RUL) of an IGBT to ensure the safety and reliability of the power electronics system is currently a challenging issue i...
Main Authors: | Zhen Liu, Wenjuan Mei, Xianping Zeng, Chenglin Yang, Xiuyun Zhou |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2017-11-01
|
Series: | Sensors |
Subjects: | |
Online Access: | https://www.mdpi.com/1424-8220/17/11/2524 |
Similar Items
-
DESIGN OF HIGH-SPEED IGBT DEVICE
by: I. Yu. Lovshenko, et al.
Published: (2019-06-01) -
IGBT Remaining Useful Life Prediction Based on Particle Filter With Fusing Precursor
by: Zhen Rao, et al.
Published: (2020-01-01) -
Optimalization of IGBT Communication
by: Pavol Spanik, et al.
Published: (2002-01-01) -
Remaining Useful Life Prediction of IGBT Modules Across Working Conditions Based on ProbSparse Self-Attention
by: ZHONG Zhiwei, WANG Yuxiang, HUANG Yixiang, XIAO Dengyu, XIA Pengcheng, LIU Chengliang
Published: (2023-08-01) -
Statistical analysis and optimization of igbt manufacturing flow
by: Baranov V. V., et al.
Published: (2015-02-01)