Improvement of physical properties of MOS devices based on rare earth oxides
We have successfully deposited a thin film of rare earth oxide on a Si substrate. After morphological characterization via a scanning electron microscope and an atomic force microscope, the electrical properties of the Al/Dy2O3/Si MOS structure were investigated using the current–voltage I(V) and ca...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0135129 |