Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs

Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs

We measure interface trap density near the conduction band edge and fixed oxide charge in commercial, packaged, 4H-SiC 1.2 kV planar Power MOSFETs. These traps determine the device threshold voltage, performance, and reliability. The subthreshold slope is used to extract interface trap density at th...

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Bibliographic Details
Main Authors: Susanna Yu, Marvin H. White, Anant K. Agarwal
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Access
Subjects:
Silicon carbide (SiC)
power MOSFET
oxide reliability
interface trap density
oxide charge
subthreshold slope
Online Access:https://ieeexplore.ieee.org/document/9597510/

Internet

https://ieeexplore.ieee.org/document/9597510/

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