Effects of multi-layer Ti/Al electrode and ohmic groove etching on ohmic characteristics of AlGaN/GaN HEMT devices
This experiment studied the effects of multi-layer Ti/Al electrodes, ohmic groove etching, and annealing temperature on the ohmic characteristics, output characteristics, and surface topography of AlGaN/GaN high electron mobility transistor (HEMT) devices. In the experiment, we prepared the device s...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0070957 |