Recent Advances in In-Memory Computing: Exploring Memristor and Memtransistor Arrays with 2D Materials

Recent Advances in In-Memory Computing: Exploring Memristor and Memtransistor Arrays with 2D Materials

Highlights State-of-the-art research on two-dimensional material-based memristive arrays is comprehensively reviewed. Critical steps in achieving in-memory computing are identified and highlighted, covering material selection, device performance analysis, and array structure design. Challenges in pr...

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Bibliographic Details
Main Authors: Hangbo Zhou, Sifan Li, Kah-Wee Ang, Yong-Wei Zhang
Format: Article
Language:English
Published: SpringerOpen 2024-02-01
Series:Nano-Micro Letters
Subjects:
2D materials
Memristors
Memtransistors
Crossbar array
In-memory computing
Online Access:https://doi.org/10.1007/s40820-024-01335-2

Internet

https://doi.org/10.1007/s40820-024-01335-2

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