Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe

Most work on nonreciprocal transport is limited to cryogenic temperatures due to the low Rashba spin splitting energy. Here, the authors report a nonreciprocal charge transport behavior up to room temperature in semiconductor α-GeTe with coexisting the surface and bulk Rashba states.

Bibliographic Details
Main Authors: Yan Li, Yang Li, Peng Li, Bin Fang, Xu Yang, Yan Wen, Dong-xing Zheng, Chen-hui Zhang, Xin He, Aurélien Manchon, Zhao-Hua Cheng, Xi-xiang Zhang
Format: Article
Language:English
Published: Nature Portfolio 2021-01-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-020-20840-7