Analog and RF performance optimization for gate all around tunnel FET using broken-gap material
Abstract Many times, the fabricated cylindrical gate-all-around tunnel FET (GAA TFET) has an uneven radius due to several etching and deposition processes involved while fabricating the device, which show notable variations in the performance of the device. In this report, III–V uneven GAA TFET is s...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2022-10-01
|
| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-022-22485-6 |